High Voltage Silicon IGBT Modules
The Insulated Gate Bipolar Transistor (IGBT) is a semiconductor device that combines the high-efficiency and fast-switching characteristics of a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) with the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). This unique combination makes IGBTs particularly well-suited for high voltage and high power applications. In the fields of high voltage direct current (HVDC) transmission and electric traction, IGBTs play a crucial role due to their ability to handle large currents and voltages with high efficiency, reliability, and reduced power losses.
Our IGBT modules, which include high voltage options such as 4500V and 6500V, can handle currents ranging from 1000A to 3600A. Their fast switching speeds and robustness make them essential components in modern power grids, power electrics, enabling efficient and effective control of electrical power in HVDC systems and traction motors used in electric trains and other vehicles.
IGBT Module
Silicon Carbide MOSFET Power Modules
Silicon Carbide (SiC) MOSFETs and power modules are gaining widespread adoption across various industries such as electric vehicles (EVs), inverters/converters, the photovoltaic industry, and infrastructure projects due to their superior performance and efficiency. SiC MOSFETs offer advantages like higher switching speeds, lower losses, and greater thermal conductivity compared to traditional silicon-based devices, making them ideal for high-performance and high-efficiency applications.
We supply discrete SiC MOSFETs with voltage ratings of 1200V, 1700V, and 2000V, and a range of on-resistance (Rds(on)) values from 8mΩ to 1000mΩ, catering to diverse application requirements. Additionally, we offer customizable SiC power modules designed to meet specific client needs, ensuring optimal performance and integration into their systems. Our SiC solutions provide enhanced efficiency, reliability, and compactness, driving advancements in modern power electronics across various sectors.
SiC MOSFET
SiC Power Module
Gallium Nitride (GaN) on SiC High Electron Mobility Transistors (HEMTs)
GaN on SiC HEMTs are widely used in applications requiring high power, efficiency, and frequency performance, such as RF and microwave amplifiers in telecommunications, radar systems, and satellite communications. Their robustness and thermal conductivity make them ideal for aerospace ,Additionally, they are crucial in power electronics, enhancing the efficiency of electric vehicles, renewable energy systems, and industrial power supplies. Their high-frequency capabilities also make them valuable in medical imaging and test equipment, where precision and reliability are essential.
